PART |
Description |
Maker |
2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor -2A / -30V Bipolar transistor High-gain Amplifier Transistor (?32V, ?0.3A) General purpose transistor (50V, 0.15A) High-voltage Amplifier Transistor (120V, 50mA) High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz) Power transistor (60V, 3A) Medium power transistor (60V, 2A) Medium power transistor (60V, 0.5A) High-gain Amplifier Transistor (32V , 0.3A) Medium Power Transistor (32V, 1A) Power Transistor (80V, 1A) Low VCE(sat) transistor (strobe flash) High-current Gain Medium Power Transistor (20V, 0.5A) Low frequency amplifier 4V Drive Nch MOS FET 10V Drive Nch MOS FET 2.5V Drive Nch MOS FET 4 Amps, 600 Volts N-CHANNEL POWER MOSFET
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UTC ROHM[Rohm]
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BUK9535-55 |
TrenchMOS锛?M锛?ransistor Logic level FET(TrenchMOS锛?M锛??浣???昏??靛钩FET) TrenchMOS transistor Logic level FET TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶体管逻辑电平FET) TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)
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PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
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BUK9505-30A BUK9505-30A_2 |
TrenchMOS? transistor Logic level FET TrenchMOS(tm) transistor Logic level FET From old datasheet system TrenchMOS TM transistor Logic level FET TrenchMOS transistor Logic level FET
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NXP Semiconductors Philips
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BUK95150-55A BUK96150-55A |
TrenchMOS(tm) transistor Logic level FET TrenchMOS transistor standard level FET TrenchMOS TM transistor
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PHILIPS[Philips Semiconductors] NXP Semiconductors
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BUK7606-55 BUK7606-55A |
TrenchMOS(TM)transistor Standard level FET(TrenchMOS(TM)晶体管标准电平FET) Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk TrenchMOSTM)transistor Standard level FET(TrenchMOSTM)晶体管标准电平FET) TrenchMOS(商标)一级标准场效应晶体管(TrenchMOS(商标)晶体管标准电平场效应管)
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Philips Semiconductors 3M Company
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MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
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ON Semiconductor Motorola, Inc
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MTV10N100E_D ON2669 MTV10N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 1000 VOLTS
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ON Semiconductor
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MTD3N25E MTD3N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
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ON Semiconductor MOTOROLA[Motorola, Inc]
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BUK95180-100A BUK95180_96180-100A_1 BUK96180-100A |
TrenchMOS(tm) transistor Logic level FET From old datasheet system TrenchMOS TM transistor Logic level FET
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Philips Semiconductors NXP Semiconductors
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MTD1N60E MTD1N60E_D ON2473 MTD1N60E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
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MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
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MTV6N100E MTV6N100E_D ON2675 MTV6N100E-D |
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM From old datasheet system
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ON Semiconductor MOTOROLA[Motorola, Inc]
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